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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI1062X-T1-GE3

SI1062X-T1-GE3 - SMD N channel transistors

SI1062X-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 0.53A; Idm: 2A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 20V
Drain current 0.53A
Pulsed drain current 2A
Power dissipation 0.22W
Case SC89
SOT563
Gate-source voltage ±8V
On-state resistance 762mΩ
Mounting SMD
Gate charge 2.7nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat