SI1036X-T1-GE3 - Multi channel transistors

SI1036X-T1-GE3
Description

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 0.61A
Pulsed drain current 2A
Power dissipation 0.22W
Case SC89
SOT563
Gate-source voltage ±8V
On-state resistance 1.1Ω
Mounting SMD
Gate charge 2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat