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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI1032R-T1-GE3

SI1032R-T1-GE3 - SMD N channel transistors

SI1032R-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 20V; 0.14A; Idm: -0.5A; 0.13W; SC75A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 20V
Drain current 0.14A
Pulsed drain current -0.5A
Power dissipation 0.13W
Case SC75A
Gate-source voltage ±6V
On-state resistance 5Ω
Mounting SMD
Gate charge 0.75nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat