SI1016CX-T1-GE3 - Multi channel transistors

SI1016CX-T1-GE3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Kind of transistor complementary pair
Drain-source voltage 20/-20V
Drain current 0.49/-0.49A
Pulsed drain current 2A
Power dissipation 0.14W
Case SC89
SOT563
Gate-source voltage ±8V
On-state resistance 396/756mΩ
Mounting SMD
Gate charge 2/2.5nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat