SI1013CX-T1-GE3 - SMD P channel transistors

SI1013CX-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.45A; 0.19W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -20V
Drain current -0.45A
Pulsed drain current -1.5A
Power dissipation 0.19W
Case SC89
SOT563
Gate-source voltage ±8V
On-state resistance 1.5Ω
Mounting SMD
Gate charge 2.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat