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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / SH8KC6TB1

SH8KC6TB1 - Multi channel transistors

SH8KC6TB1
Description

Transistor: N-MOSFET x2; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8; ESD

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 60V
Drain current 6.5A
Pulsed drain current 26A
Power dissipation 2W
Case SOP8
Gate-source voltage ±20V
On-state resistance 46mΩ
Mounting SMD
Gate charge 7.6nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat