SCTWA30N120 - THT N channel transistors

SCTWA30N120
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 34A
Pulsed drain current 90A
Power dissipation 270W
Case HIP247™
Gate-source voltage -10...22V
On-state resistance 0.1Ω
Mounting THT
Gate charge 105nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat