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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
| Manufacturer |
STMicroelectronics |
| Type of transistor |
N-MOSFET |
| Technology |
SiC |
| Polarisation |
unipolar |
| Drain-source voltage |
1.2kV |
| Drain current |
34A |
| Pulsed drain current |
90A |
| Power dissipation |
270W |
| Case |
HIP247™ |
| Gate-source voltage |
-10...22V |
| On-state resistance |
0.1Ω |
| Mounting |
THT |
| Gate charge |
105nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |