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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SCTW35N65G2V

SCTW35N65G2V - THT N channel transistors

SCTW35N65G2V
Description

Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 650V
Drain current 45A
Pulsed drain current 90A
Power dissipation 240W
Case HIP247™
Gate-source voltage -10...22V
On-state resistance 68mΩ
Mounting THT
Gate charge 73nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat