SCT3160KLGC11 - THT N channel transistors

SCT3160KLGC11
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 17A
Power dissipation 103W
Case TO247
On-state resistance 0.16Ω
Mounting THT
Gate charge 42nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat