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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SCT10N120

SCT10N120 - THT N channel transistors

SCT10N120
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 12A
Pulsed drain current 24A
Power dissipation 150W
Case HIP247™
Gate-source voltage -10...25V
On-state resistance 690mΩ
Mounting THT
Gate charge 22nC
Kind of package tube
Kind of channel enhancement
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