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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SCT1000N170

SCT1000N170 - THT N channel transistors

SCT1000N170
Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W

Specifications
Manufacturer STMicroelectronics
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.7kV
Drain current 7A
Pulsed drain current 20A
Power dissipation 96W
Case HIP247™
Gate-source voltage -10...22V
On-state resistance 1.3Ω
Mounting THT
Gate charge 13.3nC
Kind of package tube
Kind of channel enhancement
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