S2M0160120K-SMC - THT N channel transistors

S2M0160120K-SMC
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W

Specifications
Manufacturer SMC DIODE SOLUTIONS
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 12A
Pulsed drain current 40A
Power dissipation 130W
Case TO247-4
Gate-source voltage -5...20V
On-state resistance 0.3Ω
Mounting THT
Gate charge 26.5nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat