S2M0120120J-SMC - SMD N channel transistors

S2M0120120J-SMC
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W

Specifications
Manufacturer SMC DIODE SOLUTIONS
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 15A
Pulsed drain current 66A
Power dissipation 153W
Case D2PAK-7
Gate-source voltage -5...20V
On-state resistance 212mΩ
Mounting SMD
Gate charge 29.6nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat