S2M0080120D-SMC - THT N channel transistors

S2M0080120D-SMC
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W

Specifications
Manufacturer SMC DIODE SOLUTIONS
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 29A
Pulsed drain current 82A
Power dissipation 231W
Case TO247-3
Gate-source voltage -5...20V
On-state resistance 137mΩ
Mounting THT
Gate charge 54nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat