RU1J002YNTCL - SMD N channel transistors

RU1J002YNTCL
Description

Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 50V
Drain current 0.2A
Pulsed drain current 0.8A
Power dissipation 0.15W
Case SOT323F
Gate-source voltage ±8V
On-state resistance 3.8Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat