RSR030N06HZGTL - SMD N channel transistors

RSR030N06HZGTL
Description

Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 3A
Pulsed drain current 12A
Power dissipation 1W
Case TSMT3
Gate-source voltage ±20V
On-state resistance 0.105Ω
Mounting SMD
Gate charge 5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat