RSJ250P10FRATL - SMD P channel transistors

RSJ250P10FRATL
Description

Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -25A
Pulsed drain current -50A
Power dissipation 50W
Case TO263
Gate-source voltage ±20V
On-state resistance 63mΩ
Mounting SMD
Gate charge 60nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
Version ESD
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat