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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / RRH140P03GZETB

RRH140P03GZETB - SMD P channel transistors

RRH140P03GZETB
Description

Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -14A
Pulsed drain current -56A
Power dissipation 2W
Case SOP8
Gate-source voltage ±20V
On-state resistance 7mΩ
Mounting SMD
Gate charge 150nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat