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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / RQ3E180AJTB

RQ3E180AJTB - SMD N channel transistors

RQ3E180AJTB
Description

Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 30A
Pulsed drain current 72A
Power dissipation 30W
Case HSMT8
Gate-source voltage ±12V
On-state resistance 5.8mΩ
Mounting SMD
Gate charge 39nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat