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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / RQ3E120GNTB

RQ3E120GNTB - SMD N channel transistors

RQ3E120GNTB
Description

Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 48A; 15W; HSMT8

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 27A
Pulsed drain current 48A
Power dissipation 15W
Case HSMT8
Gate-source voltage ±20V
On-state resistance 13.8mΩ
Mounting SMD
Gate charge 10nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat