RQ3E120ATTB - SMD P channel transistors

RQ3E120ATTB
Description

Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -39A
Pulsed drain current -48A
Power dissipation 20W
Case HSMT8
Gate-source voltage ±20V
On-state resistance 11.3mΩ
Mounting SMD
Gate charge 62nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat