Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / RQ3E100BNTB

RQ3E100BNTB - SMD N channel transistors

RQ3E100BNTB
Description

Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 21A
Pulsed drain current 40A
Power dissipation 15W
Case HSMT8
Gate-source voltage ±20V
On-state resistance 15.3mΩ
Mounting SMD
Gate charge 22nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat