RGS60TS65DHRC11 - THT IGBT transistors

RGS60TS65DHRC11
Description

Transistor: IGBT; 650V; 30A; 111W; TO247-3

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 30A
Power dissipation 111W
Case TO247-3
Gate-emitter voltage ±30V
Pulsed collector current 90A
Mounting THT
Gate charge 36nC
Kind of package tube
Turn-on time 46ns
Turn-off time 290ns
Features of semiconductor devices integrated anti-parallel diode
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat