RFD16N06LESM9A - SMD N channel transistors

RFD16N06LESM9A
Description

Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 16A
Power dissipation 90W
Case DPAK
Gate-source voltage ±8V
On-state resistance 47mΩ
Mounting SMD
Gate charge 62nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat