RFD12N06RLESM9A - SMD N channel transistors

RFD12N06RLESM9A
Description

Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UltraFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 8A
Power dissipation 49W
Case DPAK
Gate-source voltage ±16V
On-state resistance 75mΩ
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat