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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / RF4E100AJTCR

RF4E100AJTCR - SMD N channel transistors

RF4E100AJTCR
Description

Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 10A
Pulsed drain current 36A
Power dissipation 2W
Case DFN2020-8S
Gate-source voltage ±12V
On-state resistance 12.4mΩ
Mounting SMD
Gate charge 13nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat