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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / RF4E080GNTR

RF4E080GNTR - SMD N channel transistors

RF4E080GNTR
Description

Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 8A
Pulsed drain current 32A
Power dissipation 2W
Case DFN2020-8S
Gate-source voltage ±20V
On-state resistance 17.6mΩ
Mounting SMD
Gate charge 5.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat