RBO40-40G - Protection diodes - arrays

RBO40-40G
Description

Diode: TVS array; 35V; 120A; 1.5kW; bidirectional; D2PAK; Ch: 1; ASD™

Specifications
Manufacturer STMicroelectronics
Type of diode TVS array
Breakdown voltage 35V
Max. forward impulse current 120A
Peak pulse power dissipation 1.5kW
Semiconductor structure bidirectional
Mounting SMD
Case D2PAK
Features of semiconductor devices RBO
Leakage current 0.1mA
Number of channels 1
Technology ASD™
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Development and design: Seventh Cat