Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / R6030JNZ4C13

R6030JNZ4C13 - THT N channel transistors

R6030JNZ4C13
Description

Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 30A
Pulsed drain current 90A
Power dissipation 370W
Case TO247
Gate-source voltage ±30V
On-state resistance 143mΩ
Mounting THT
Gate charge 74nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat