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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / QS6K1TR

QS6K1TR - Multi channel transistors

QS6K1TR
Description

Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 4A; 1.25W; TSMT6

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 30V
Drain current 1A
Pulsed drain current 4A
Power dissipation 1.25W
Case TSMT6
Gate-source voltage ±12V
On-state resistance 364mΩ
Mounting SMD
Gate charge 1.7nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat