PSMN8R2-80YS.115 - SMD N channel transistors

PSMN8R2-80YS.115
Description

Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 80V
Drain current 82A
Pulsed drain current 326A
Power dissipation 130W
Case LFPAK56
PowerSO8
SOT669
Gate-source voltage ±20V
On-state resistance 5.8mΩ
Mounting SMD
Gate charge 55nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat