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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / PSMN4R6-60BS.118

PSMN4R6-60BS.118 - SMD N channel transistors

PSMN4R6-60BS.118
Description

Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Pulsed drain current 565A
Power dissipation 211W
Case D2PAK
SOT404
Gate-source voltage ±20V
On-state resistance 8.6mΩ
Mounting SMD
Gate charge 70.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat