PSMN4R4-80BS.118 - SMD N channel transistors

PSMN4R4-80BS.118
Description

Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 80V
Drain current 100A
Pulsed drain current 680A
Power dissipation 306W
Case D2PAK
SOT404
Gate-source voltage ±20V
On-state resistance 9.12mΩ
Mounting SMD
Gate charge 125nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat