PSMN4R1-60YLX - SMD N channel transistors

PSMN4R1-60YLX
Description

Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Pulsed drain current 593A
Power dissipation 238W
Case LFPAK56
PowerSO8
SOT669
Gate-source voltage ±20V
On-state resistance 3.3mΩ
Mounting SMD
Gate charge 103nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat