PSMN3R9-60PSQ - THT N channel transistors

PSMN3R9-60PSQ
Description

Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 130A
Pulsed drain current 705A
Power dissipation 263W
Case SOT78
TO220AB
Gate-source voltage ±20V
On-state resistance 2.94mΩ
Mounting THT
Gate charge 103nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat