PSMN3R0-60PS.127 - THT N channel transistors

PSMN3R0-60PS.127
Description

Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Pulsed drain current 824A
Power dissipation 306W
Case SOT78
TO220AB
Gate-source voltage ±20V
On-state resistance 2.4mΩ
Mounting THT
Gate charge 130nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat