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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / PSMN2R0-30YLE.115

PSMN2R0-30YLE.115 - SMD N channel transistors

PSMN2R0-30YLE.115
Description

Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 100A
Pulsed drain current 1015A
Power dissipation 238W
Case LFPAK56
PowerSO8
SOT669
Gate-source voltage ±20V
On-state resistance 3.8mΩ
Mounting SMD
Gate charge 87nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat