PSMN1R1-30PL.127 - THT N channel transistors

PSMN1R1-30PL.127
Description

Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 120A
Pulsed drain current 1609A
Power dissipation 338W
Case SOT78
TO220AB
Gate-source voltage ±20V
On-state resistance 1.8mΩ
Mounting THT
Gate charge 243nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat