PSMN0R9-30YLDX - SMD N channel transistors

PSMN0R9-30YLDX
Description

Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 284A
Pulsed drain current 1.8kA
Power dissipation 291W
Case LFPAK56E
PowerSO8
SOT1023
On-state resistance 1.44mΩ
Mounting SMD
Gate charge 109nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat