PSMN057-200P.127 - THT N channel transistors

PSMN057-200P.127
Description

Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 39A
Pulsed drain current 156A
Power dissipation 250W
Case SOT78
TO220AB
Gate-source voltage ±20V
On-state resistance 41mΩ
Mounting THT
Gate charge 96nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat