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Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
| Manufacturer |
NEXPERIA |
| Type of transistor |
N-MOSFET |
| Polarisation |
unipolar |
| Drain-source voltage |
100V |
| Drain current |
21.3A |
| Pulsed drain current |
120A |
| Power dissipation |
94.9W |
| Case |
LFPAK56 PowerSO8 SOT669 |
| On-state resistance |
103.5mΩ |
| Mounting |
SMD |
| Gate charge |
39.2nC |
| Kind of package |
reel tape |
| Kind of channel |
enhancement |
| Features of semiconductor devices |
logic level |