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Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
| Manufacturer |
NEXPERIA |
| Type of transistor |
P-MOSFET |
| Technology |
Trench |
| Polarisation |
unipolar |
| Drain-source voltage |
-20V |
| Drain current |
-0.7A |
| Pulsed drain current |
-2.8A |
| Case |
DFN1006-3 SOT883 |
| On-state resistance |
645mΩ |
| Mounting |
SMD |
| Gate charge |
1.9nC |
| Kind of package |
reel tape |
| Kind of channel |
enhancement |
| Version |
ESD |