PMZ350UPEYL - SMD P channel transistors

PMZ350UPEYL
Description

Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A

Specifications
Manufacturer NEXPERIA
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -20V
Drain current -0.7A
Pulsed drain current -2.8A
Case DFN1006-3
SOT883
On-state resistance 645mΩ
Mounting SMD
Gate charge 1.9nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat