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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / PMPB215ENEA/FX

PMPB215ENEA/FX - SMD N channel transistors

PMPB215ENEA/FX
Description

Transistor: N-MOSFET; Trench; unipolar; 80V; 1.2A; Idm: 7.6A; 1.6W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 80V
Drain current 1.2A
Pulsed drain current 7.6A
Power dissipation 1.6W
Case DFN2020MD-6
SOT1220
On-state resistance 445mΩ
Mounting SMD
Gate charge 7.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat