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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / PJW4P06A-AU-R2

PJW4P06A-AU-R2 - SMD P channel transistors

PJW4P06A-AU-R2
Description

Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223

Specifications
Manufacturer PanJit Semiconductor
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -4A
Pulsed drain current -16A
Power dissipation 3.1W
Case SOT223
Gate-source voltage ±20V
On-state resistance 0.13Ω
Mounting SMD
Gate charge 10nC
Kind of package reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat