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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / PJT7801-R1

PJT7801-R1 - Multi channel transistors

PJT7801-R1
Description

Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW

Specifications
Manufacturer PanJit Semiconductor
Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -20V
Drain current -0.7A
Pulsed drain current -2.8A
Power dissipation 0.35W
Case SOT363
Gate-source voltage ±8V
On-state resistance 0.6Ω
Mounting SMD
Gate charge 2.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat