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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / PJT7800-R1

PJT7800-R1 - Multi channel transistors

PJT7800-R1
Description

Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363

Specifications
Manufacturer PanJit Semiconductor
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 20V
Drain current 1A
Pulsed drain current 4A
Power dissipation 0.35W
Case SOT363
Gate-source voltage ±8V
On-state resistance 0.4Ω
Mounting SMD
Gate charge 1.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat