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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / PJT7600-R1

PJT7600-R1 - Multi channel transistors

PJT7600-R1
Description

Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW

Specifications
Manufacturer PanJit Semiconductor
Type of transistor N/P-MOSFET
Polarisation unipolar
Drain-source voltage 20/-20V
Drain current 1A/-700mA
Power dissipation 0.35W
Case SOT363
Gate-source voltage ±8V
On-state resistance 400/600mΩ
Mounting SMD
Gate charge 1.6/2.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat