PJS6601-S1 - Multi channel transistors

PJS6601-S1
Description

Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W

Specifications
Manufacturer PanJit Semiconductor
Type of transistor N/P-MOSFET
Polarisation unipolar
Drain-source voltage 20/-20V
Drain current 4.1/-3.1A
Power dissipation 1.25W
Case SOT23-6
Gate-source voltage ±12V
On-state resistance 95/190mΩ
Mounting SMD
Gate charge 4.6/5.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat