PJMH190N60E1-T0 - THT N channel transistors

PJMH190N60E1-T0
Description

Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W

Specifications
Manufacturer PanJit
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 20.6A
Pulsed drain current 62A
Power dissipation 160W
Case TO247AD-3
Gate-source voltage ±30V
On-state resistance 0.18Ω
Mounting THT
Gate charge 40nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat