PJGBLC12C-R1 - Protection diodes - arrays

PJGBLC12C-R1
Description

Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323

Specifications
Manufacturer PanJit Semiconductor
Type of diode TVS array
Breakdown voltage 13.97...15.44V
Max. forward impulse current 1A
Peak pulse power dissipation 0.35kW
Semiconductor structure bidirectional
Mounting SMD
Case SOD323
Max. off-state voltage 12V
Leakage current 1µA
Number of channels 1
Kind of package reel
tape
Capacitance 3pF
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Development and design: Seventh Cat